Electronic device substrate, electronic device and methods for making same

ABSTRACT

An electronic device substrate having: a base material formed of a thin board; an electrical insulation layer formed on the base material and having plural openings in a thickness direction thereof; and a metal plating layer filled in the plural openings. The base material has a metal layer, a release layer formed contacting the metal layer, and a metal film formed contacting the release layer.

The present application is based on Japanese patent application No.2006-141862, the entire contents of which are incorporated herein byreference.

BACKGROUND OF THE INVENTION

1. Field of the Invention

This invention relates to an electronic device substrate, an electronicdevice and methods for making the same and, in particular, to anelectronic device that, despite having a coreless type structureadvantageous to thinning or downsizing, is less likely to have a crackduring its production process and has a structure advantageous forexternal mounting and a method of making the same. Also, this inventionrelates to an electronic device substrate used for the electronic deviceand a method of making the same.

2. Description of the Related Art

FIGS.8A and 8B are a cross sectional view and a top view (mountingsurface), respectively, showing a conventional electronic device.

The electronic device 100 comprises: a wiring substrate 102 with athrough hole 103 formed therein; a die pad 104 formed on the wiringsubstrate 102; plural wiring patterns 105 which are formed on the wiringsubstrate 102 and each have a metal electrode 105 a and an internalconnecting terminal 105 b formed on both ends thereof; an electronicparts 106 mounted and bonded onto the die pad 104 through a conductivepaste etc. (not shown); plural external electrode pads 107 formed on thebottom of the wiring substrate 102 and connected to the lower end of thethrough hole 103; ball-shaped external connecting terminals 108 formedon the external electrode pads 107; bonding wires 109 formed of Au wireetc. and connecting a terminal 106 a with the internal connectingterminal 105 b; and a sealing resin 110 formed on the wiring substrate102 to cover the electronic parts 106 and the bonding wires 109.

The wiring substrate 102 is formed of glass epoxy resin, polyimide tapeetc.

The through hole 103 is a conductor for electrically connecting themetal electrode 105 with the external electrode pad 107. The die pad104, the wiring pattern 105 and the external electrode pad 107 are madeof a copper foil etc. formed by photochemical etching etc.

The through hole 103, the die pad 104, the wiring pattern 105 and theexternal electrode pad 107 are provided with copper plating, nickel baseplating, gold plating etc.

The electronic device 100 as shown in FIG. 8A is produced such that theelectronic parts 106 is mounted on the die pad 104 of the wiringsubstrate 102, the terminal 106 a of the electronic parts 106 isconnected through the bonding wires 109 to the internal connectingterminal 105 b, and the sealing resin 110 formed of epoxy resin etc. isformed thereon. Typically, in the final step, the ball-shaped externalconnecting terminal 108 such as a solder ball is attached onto theexternal electrode pad 107.

Recently, a coreless type electronic device (hereinafter called corelesspackage) is proposed which does not use a module substrate. For example,JP-A-3-94459 (pages 3-4 and FIG. 1) discloses a coreless package thatelectronic parts is die-bonded on a base film and wire-bonded to a metalbase, and then unnecessary parts of the metal base is removed by etchingto expose terminals and a mounting portion.

FIG.9 shows the structure of the coreless package as disclosed inJP-A-3-94459. The coreless package 120 is constructed such that thewiring substrate 102, as an insulating core substrate, in FIG. 8A isremoved, and the back surface of the die pad 104 and the wiring pattern105 is exposed on the bottom of the package.

JP-A-3-99456 (pages 2-3 and FIG. 1) discloses a coreless package withplural electronic parts elements. The coreless package is constructedsuch that the plural electronic parts are wire-bonded to a circuitpattern, these are resin-sealed integrally, a protective coat is formedon the bottom of the package, and gold plating for corrosion preventionis formed on the circuit pattern exposed at an opening of the protectivecoat.

FIGS. 10A to 10E show a method of making the coreless package 120 asshown in FIG.9.

First, as shown in FIG. 1A, on an insulating transfer film 121 as a coresubstrate, the die pad 104, and the wiring pattern 105 having the metalelectrode 105 a and the internal connecting terminal 105 b are formed.

Then, as shown in FIG. 10B, the electronic parts 106 is mounted on thedie pad 104. Then, as shown in FIG. 10C, the terminal of the electronicparts 106 is connected through the bonding wires 109 to the internalconnecting terminal 105 b.

Then, as shown in FIG. 10D, the electronic parts 106 is sealed with thesealing resin 110. Then, by removing the transfer film 121, the corelesspackage 120 as shown in FIG. 10E can be obtained. This method isgenerally called transfer method, where the wiring conductor istransferred to the side of the sealing resin 110.

JP-A-9-252014 (paragraphs [0007]-[0010] and FIG. 2) discloses a transfermethod for making the coreless package by using a thick base materialinstead of the transfer film. This method is conducted such that a metalfoil is pasted to the base material, an electronic parts is mounted onthe metal foil and wire-bonded, a resin is sealed thereon, and thesealing resin is separated from the based material.

JP-A-2002-9196 (paragraphs [0016]-[0025] and FIGS. 2-3) discloses atransfer-like method for making the coreless package where the metalbase located at the bottom is etched. This method is conducted such thata resist pattern is formed on the metal base as a core substrate,openings are formed in the resist pattern corresponding to a die bondingportion and a bonding portion, the opening is filled with nickel platingand gold plating is formed on the surface of the nickel plating, theresist pattern is removed, an electronic parts is mounted on the diebonding portion, wire bonding is made onto a gold plating film as thebonding portion, a resin is sealed thereon, and the metal base isremoved by etching.

Conductors for the die pad, the internal connecting terminal, the wiringpattern, the external connecting electrode etc. are typically formed ofa copper foil such as an electrolytic copper foil, a rolled copper foiletc. The copper foil is patterned by photochemical etching to form thedie pad, the internal connecting terminal, the wiring pattern, theexternal connecting electrode etc.

FIG. 11 shows the detailed composition of a transfer film unit includingthe transfer film 121 as shown in FIG. 10A. The transfer film unitcomprises: an adhesive 122 coated on the transfer film 121; the die pad104 and the wiring pattern 105 formed on the adhesive 122; and afunctional plating 123 formed on the surface of the die pad 104 and thewiring pattern 105.

The functional plating 123 is used to facilitate the connection betweenthe terminal of the electronic parts 106 and the metal electrode 105.For example, the functional plating 123 is formed of, as a base plating,an electroless nickel plating or electrical nickel plating, and anelectroless gold plating or electrical gold plating formed thereon.

In general, the electrical nickel plating is formed 0.5 to 2.0 μm inthickness depending on heating conditions in the mounting or wirebonding of electronic parts. The base nickel plating serves as aprevention film (or a barrier film) for thermal diffusion of copper intogold plating film. The gold plating is formed as a surface layer sinceit has high connection reliability in ultrasonic wire bonding. Itsthickness is desired to be as thick as possible to enhance thewire-bonding performance, but its optimum thickness is selected 0.1 to2.0 μm in view of the productivity and manufacturing cost.

However, the conventional electronic devices each have the followingproblems.

The composition as shown in FIG. 11 has a problem that the gold platingof the functional plating 123 is poor in adhesiveness with the sealingresin 110. Namely, when the gold plating is formed on the surface of thefunctional plating 123, adhesiveness with the sealing resin deterioratesto lower the reliability of the electronic device since the gold doesnot create any oxide film with high electro negativity thereon.

The BGA structure as shown in FIG. 8A is advantageous in that theexternal mounting of the electronic device is rendered easy by theprotruding external terminal 108 such as a solder ball. However, thedistance between adjacent electrodes has to be more than the diameter ofthe ball. Further, the total thickness of the electronic device must beincreased since the diameter of the ball is added to the thickness ofthe electronic device.

In producing the coreless package 120 as shown in FIGS. 10A to 10E, thetransfer film 121 is removed in the final step. However, the adhesive122 provided on the transfer film 121 may be left on the back surface ofthe metal electrode 105 a even after separating the transfer film 121.Further, the transfer film 121 may be partially left thereon due to theimperfect separation.

In order to solve this problem, JP-A-2002-9196 discloses a method ofconnecting the metal base, as a core substrate, and the electrodethrough a metal with low adhesiveness. However, in this method, if theadhesive force between the transfer film 121 and the wiring pattern 105is more than that between the sealing resin 110 and the wiring pattern105, the wiring pattern 105 may be separated from the sealing resin 110while adhering to the transfer film 121 when the transfer film (=coresubstrate) 121 is peeled off.

In order to solve this problem, JP-A-2002-9196 discloses a furthermethod that the metal for the wiring pattern is thickened and anextended portion is, at the periphery, provided which extends slightlyto the side of the sealing resin. However, this method causes anincrease in plating time to have the increased thickness of the wiringpattern. Further, the resist film needs to be removed while keeping theshape of the apprentice (=extended portion). Because of these, it isdifficult to shorten the distance between adjacent electrodes. As aresult, the size of the electronic device must be increased.

Further, when the metal base is peeled off by applying a mechanicalstress, the stress may cause warp or crack in the electronic device.Therefore, such a method is not suitable for the formation of,especially a low-profile electronic device.

Further, as shown in FIG. 9, it is impossible to form the wiring pattern105 under the electronic parts 106 since the die pad 104 is placedthere. Thus, the conventional coreless package designs have the problemthat the mounting area of the coreless package 120 cannot be reduced.

SUMMARY OF THE INVENTION

It is an object of the invention to provide an electronic device thatcan have a reduced mounting area while having the low-profile anddown-sized coreless structure.

It is a further object of the invention to provide a method of makingsuch an electronic device, an electronic device substrate used for suchan electronic device, and a method of making the electronic devicesubstrate.

(1) According to one aspect of the invention, an electronic devicesubstrate comprises:

a base material formed of a thin board;

an electrical insulation layer formed on the base material andcomprising a plurality of openings in a thickness direction thereof; and

a metal plating layer filled in the plurality of openings,

wherein the base material comprises a metal layer, a release layerformed contacting the metal layer, and a metal film formed contactingthe release layer.

In the above invention (1), the following modifications and changes canbe made.

(i) The base material comprises, formed in order from the electricalinsulation layer, the metal layer, the release layer, the metal layer, atape member, and

an adhesion force between the metal layer and the release layer with themetal film is smaller than that between the metal layer and theelectrical insulation layer.

(ii) The electrical insulation layer comprises a solder resist, aphoto-solder resist or a polyimide film.

(iii) The metal plating layer comprises any one of gold, silver, copper,nickel, palladium, tin, rhodium and cobalt or an alloy thereof orlaminated layers each formed of any one thereof or an alloy thereof.

(2) According to another aspect of the invention, a method of making anelectronic device substrate comprises the steps of:

forming a base material by laminating a composite metal layer comprisinga metal layer, a release layer and a metal film on a tape member;

forming an electrical insulation layer on the metal layer of the basematerial;

forming an opening in the electrical insulation layer; and

filling the opening with a metal plating layer.

(3) According to another aspect of the invention, an electronic devicecomprises:

an electronic parts comprising an external connection electrode;

an electrical insulation layer on a surface of which the electronicparts is mounted and comprises a plurality of openings in a thicknessdirection thereof;

a metal plating layer filled in the plurality of openings of theelectrical insulation layer and electrically connected to the electrodeof the electronic parts;

an insulating covering material that covers a connection surface of themetal plating layer to the electronic parts and the electronic parts;and

a conductive structure formed contacting the metal plating layer on another surface of the electrical insulation layer.

In the above invention (3), the following modifications and changes canbe made.

(iv) The conductive structure comprises a surface treatment layer formedthereon.

(v) The conductive structure comprises an external connection protrudingterminal.

(vi) The conductive structure comprises a conductor wiring layer (e.g.,with a rectangular shape in its cross section).

(4) According to another aspect of the invention, a method of making anelectronic device comprises the steps of:

providing an electronic device substrate comprising: a base materialformed of a thin board, the base material comprising a tape member and,sequentially formed on the tape member, a metal film; a release layerand a metal layer, an electrical insulation layer formed on the basematerial and a plurality of openings in a thickness direction thereof;and a metal plating layer filled in the plurality of openings;

mounting an electronic parts on the electronic device substrate,electrically connecting an electrode of the electronic parts to themetal plating layer, and subsequently covering at least the electricalconnection between the electronic parts and the metal plating layer withan insulating covering material;

removing the tape member and the metal film from the electronic devicesubstrate by using the release layer to leave the metal layer with theelectronic device substrate; and

forming a conductive structure at a position corresponding to the metalplating layer by processing the metal layer by using a photo fabrication(e.g., a selective chemical etching).

In the above invention (4), the following modifications and changes canbe made.

(vii) The conductive structure comprises an external connectionprotruding terminal.

(viii) The method further comprises the step of:

forming a surface treatment layer on a surface of the conductivestructure by using a plating method.

(ix) The conductive structure comprises a conductor wiring layer (e.g.,with a rectangular shape in its cross section) to compose a conductorcircuit.

(x) The method further comprises the steps of:

forming a surface treatment layer on a surface of the conductivestructure by using a plating method; and

forming a second electrical insulation layer on a part of the surfacetreatment layer.

In the above invention (3) or (4), the following modifications andchanges can be made.

(xi) The electronic device further comprises:

a conductor wiring layer formed on the other surface of the electricalinsulation layer and under the electronic parts.

(xii) The method further comprises the step of:

forming a conductor wiring layer on a bottom surface of the electricalinsulation layer and under the electronic parts.

(5) According to another aspect of the invention, a coreless packagecomprises:

an insulating base material comprising an opening in a thicknessdirection thereof;

an electronic parts mounted on the insulating material;

a metal plating layer formed in the opening and electrically connectedto the electronic parts;

an insulating covering material that covers the metal plating layer andthe electronic parts,

wherein the insulating base material is formed of a different materialthan the insulating covering material.

In the above invention (5), the following modifications and changes canbe made.

(xiii) The coreless package further comprises:

a conductive structure formed contacting the metal plating layer on abottom surface of the insulating base material.

(xiv) The coreless package further comprising:

a conductor wiring layer formed on a bottom surface of the insulatingbase material and under the electronic parts.

ADVANTAGES OF THE INVENTION

In accordance with the invention, an electronic device can be providedthat has a reduced mounting area while having the low-profile anddown-sized coreless structure as well as preventing a crack in itsproduction process. Thus, the electronic device is suitable for theexternal mounting.

BRIEF DESCRIPTION OF THE DRAWINGS

The preferred embodiments according to the invention will be explainedbelow referring to the drawings, wherein:

FIG. 1 is a cross sectional view showing an electronic device substratein a first preferred embodiment according to the invention;

FIGS. 2A to 2H are cross sectional views showing a method of making theelectronic device substrate in FIG. 1;

FIG. 3 is a cross sectional view showing an electronic device substratein a second preferred embodiment according to the invention;

FIGS. 4A to 4K are cross sectional views showing a method of making theelectronic device substrate in FIG. 3;

FIG. 5 is a cross sectional view showing an electronic device substratein a third preferred embodiment according to the invention;

FIGS. 6A to 6K are cross sectional views showing a method of making theelectronic device substrate in FIG. 5;

FIGS. 7A to 7D illustrate a comparison between the structure of aconventional coreless package and the structure of an electronic devicein a third preferred embodiment of the invention wherein a separationdistance D is set constant, where FIG. 7A is a transparent top viewshowing the conventional coreless package, FIG. 7B is a cross sectionalview cut along a line A-A′ in FIG. 7A, FIG. 7C is a transparent top viewshowing the electronic device of the third embodiment, and FIG. 7D is across sectional view cut along a line A-A′ in FIG. 7C;

FIG. 8A is a cross sectional view showing the conventional electronicdevice;

FIG. 8B is a top view showing a mounting surface of the electronic partsin FIG. 8A;

FIG. 9 is a cross sectional view showing the conventional electronicdevice with a coreless package structure;

FIGS. 10A to 10E are cross sectional views showing a method of makingthe electronic device in FIG. 9; and

FIG. 11 is a cross sectional view showing the detailed structure of atransfer film in FIG. 10A.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS First Embodiment

Composition of Electronic Device Substrate

FIG. 1 shows an electronic device substrate in the first preferredembodiment according to the invention.

The electronic device substrate 10 comprises: a composite metal layer(or composite copper foil) 12 that a metal layer 3 formed of acopper-foil as a base material is provided with a release layer (notshown) formed thereon and a thin metal film 2 is formed on the releaselayer; a tape member 1 that is attached through an adhesive 9 (See FIG.2B) to the composite metal layer. 12; a PSR film 4 that is, as a firstinsulation layer, formed on an opposite surface of the metal layer 3with a predetermined pattern; a first plating film 6 that is formed inan opening 5 formed at a predetermined position of the PSR film 4; and asecond plating film 7 that is formed on the first plating film 6.

The metal layer 3 is desirably formed of a copper foil due to itsavailability, cost, high electrical conductivity, removal easiness inthe final step etc. Alternatively, it may be formed of a stainless foil,aluminum or aluminum alloy foil, nickel or nickel alloy foil, or tin ortin alloy foil.

The PSR film 4 can be formed of an organic resist film, e.g., aninsoluble solder resist or photo-solder resist.

The first plating film 6 is suitably formed of nickel, tin, solderplating etc. in use for solder mounting. It is suitably formed of gold,silver, palladium nickel etc. in use for pressure-welding mounting withanisotropic conductive film (ACF), anisotropic conductive paste (ACP),non-conductive film (NCF), non-conductive paste (NCP) etc.

The second plating film 7 is used to have electrical connection withelectrodes of electronic parts. It can be formed of gold, silver,palladium etc. Meanwhile, in case of flip-chip connection of electronicparts with a gold bump or a solder bump formed thereon, it needs to beformed of gold, tin, palladium, solder plating etc.

The first plating film 6 and the second plating film 7 compose a metalplating layer 13 and are used as a wiring pattern for the electronicdevice.

Method of Making the Electronic Device Substrate

A method of making the electronic device substrate of the firstembodiment will be explained below. FIGS. 2A to 2H are cross sectionalviews showing the method of making the electronic device substrate inFIG. 1.

First, as shown in FIG. 2A, the composite metal layer (or compositecopper foil) 12 is provided which has the metal layer 3 formed of a 18μm thick rolled copper-foil, the release layer (not shown) formedthereon, and the metal film 2 of a very thin copper foil formed on therelease layer. The composite metal layer 12 may be “Copper Bond ExtraThin Foil” XTF, registered trade mark, available from Olin Corp.

Such a composite copper foil is called a copper foil with carrier. Acore substrate with carrier means a base material which is produced suchthat a release layer with a low adhesiveness to allow its release in afollowing step is formed on a carrier layer formed of a more than 18 μmthick metal foil (mostly copper foil), and then a thin metal foil isformed thereon by electrolysis.

Instead of the “Copper Bond Extra Thin Foil” XTF of Olin corp., themetal foil with carrier maybe “Micro Thin” available from Mitsui MiningAnd Smelting Company, Ltd. The latter is a base material which uses anorganic release layer as the release layer and the other componentsthereof are the same as the former. Both of the base materials can allowthe release of the thick base carrier layer from the surface metal layer(i.e., ultra-thin copper layer) by a small force of about 20 N/m.Especially the former uses an inorganic release layer-and, therefore,can allow the easy release even after heating higher than 400° C. Thus,the copper foil with carrier (i.e., the latter) using the organicrelease layer is disadvantageous in that its upper temperature limit isas low as 230° C., as compared to the copper foil with carrier (i.e.,the former) using the inorganic release layer.

On the other hand, as shown in FIG. 2B, a tape member 1 is providedwhich is formed of a polyimide tape 8 and an adhesive 9 coated thereon.In this embodiment, a 25 μm thick “Upilex” from UBE Industries, Ltd. isused as the polyimide tape 8, and “X series” from TOMOEGAWA Co., Ltd. isused as the adhesive 9.

Then, as shown in FIG. 2C, the tape member 1 and the composite metallayer 12 are laminated by roll laminating while facing the adhesive 9and the metal film 2 each other so as to make a base material 11. Thus,the base material 11 has a five layer composition which has, in theorder from the surface layer, the rolled copper foil (=the metal layer3: 18 μm)/the release layer (about 100 (angstroms)/the ultra-thin copperfoil (=the metal layer 2: 3 μm)/the adhesive 9 (12 μm)/the supportsubstrate (=the polyimide tape 8: 25 μm).

Then, as shown in FIG. 2D, the PSR film 4 as the first insulation layeris coated 15 μm thick on the metal layer 3 of the base material 11 byscreen printing. Then, as shown in FIG. 2E, ultraviolet lays 18 areirradiated to the PSR film 4 through a photomask 17. Then, as shown inFIG. 2F, the opening 5 with a predetermined shape is formed in the PSRfilm 4 by a development process.

Then, the substrate in FIG. 2F is soaked into electrolytic nickelplating solution, and the first plating film 6 as shown in FIG. 2G isformed 0.5 μm thick in the opening 5 by nickel plating while using theultra-thin copper film as a negative electrode.

Then, it is soaked into electrolytic gold plating solution, and thesecond plating film 7 as shown in FIG. 2H is formed 0.5 μm thick in theopening 5 by gold plating. Then, by sufficiently washing and drying it,the electronic device substrate 10 is obtained.

Effects of the First Embodiment

The following effects can be obtained by the first embodiment of theinvention.

(1) Since the composite metal layer 12 has, as a support board, the tapemember 1 attached to the metal film 2, the thickness to the polyimidetape 8 can be well balanced. Thus, the separation of the polyimide tape8 can be smoothly conducted.

(2) Since the PSR film 4 and the metal plating layer 13 are as thin asless than 30 μm, the microscopic processing can be facilitated. Further,since they have only a thickness and a projected area slightly greaterthan that of the electronic parts mounted thereon, the electronic devicecan be rendered small-sized and low-profile.

(3) It is not necessary to form the microscopic pattern by etching thecopper foil. Thus, resist coating, exposure, development, and etchingsteps for photo-etching can be rendered unnecessary.

(4) Since the PSR film 4 used to form the opening 5 is not dissolved andremoved by release solution after the plating, pollution is not causedby the release solution. Further, time required for the substratemanufacture can be reduced by that much to reduce the manufacturingcost.

(5) Since the insoluble solder resist or photo-solder resist is used asthe PSR film 4, it is unnecessary to dissolve and remove the resist filmfor the plating by the release solution. Therefore, pollution is notcaused by the release solution. Further, time required for the substratemanufacture can be reduced by that much to reduce the manufacturingcost.

Second Embodiment

Composition of Electronic Device

FIG. 3 is a cross sectional view showing an electronic device substratein the second preferred embodiment according to the invention.

The electronic device 20 comprises: an electronic device substrate 10′that is formed by removing the base material 11 from the electronicdevice substrate 10 of the first embodiment; an electronic parts 21mounted at a predetermined position on the electronic device substrate10′; bonding wires 22 that connects an external connection terminal (notshown) on the electronic parts 21 to the second plating film 7 of theelectronic device substrate 10′; a sealing resin 23, as insulatingcovering material, formed on the electronic device substrate 10′ tocover the electronic parts 21, the bonding wires 22 and the secondplating film 7; a protruding terminal 24 formed on the back surface ofthe PSR film 4 and contacting the first plating film 6; and a surfacetreatment film 25 formed on the surface of the protruding terminal 24.

Method of Making the Electronic Device

A method of making the electronic device of the second embodiment willbe explained below. FIGS. 4A to 4K are cross sectional views showing themethod of making the electronic device in FIG. 3.

First, as shown in FIG. 4B, the electronic parts 21 (which isexemplified by an IC chip in this embodiment) is bonded through a diebonding paste at a predetermined position on of the PSR film 4 of theelectronic device substrate 10 as shown in FIG. 4A (and which is alsoshown in FIG. 1). Then, as shown in FIG. 4C, the aluminum electrodeterminal of the electronic parts 21 is electrically connected throughthe gold bonding wires 22 to the second plating film 7 of the electronicdevice substrate 10.

Then, as shown in FIG. 4D, the sealing resin 23 is formed on theelectronic parts 21, the bonding wires 22 and the second plating film 7so as to protect the electronic parts 21 and the bonding portions fromthe external environment. Then, as shown in FIG. 4E, the tape member 1with the metal layer 2 is separated from the metal layer 3 to expose themetal layer 3 and to have an IC package 26 (See FIG. 4F).

The seven-layer composition as shown in FIG. 4D is, in the order fromthe top layer, the sealing resin 23 or the electronic parts 21 with thedie bonding paste or the bonding wires 22 (gold wires)/the PSR film 4 orthe first and second plating films 6, 7/the rolled copper foil (=metallayer 3)/the release layer (not shown)/the ultra-thin copper foil(=metal film 2)/the adhesive 9 (See FIG. 2B)/the support substrate (=thepolyimide tape 8: See FIG. 2B). Above all, the adhesion force at theinterface of the rolled copper foil (=metal layer 3) and the ultra-thincopper foil (=metal film 2) through the release layer is 20 N/mconsiderably small as compared to the adhesion force, greater than 1000N/m, at the other interfaces. Therefore, the tape member 1 with themetal layer 2 and the release layer can be securely separated from themetal layer 3 to expose the bottom of the metal layer 3 (=rolled copperfoil) as shown in FIG. 4F.

Then, as shown in FIG. 4G, a negative type photoresist 27 is coated onthe surface of the metal layer 3 at the bottom of the IC package 26.Then, as shown in FIG. 4H, ultraviolet rays 29 are irradiated through aphotomask 28 onto corresponding position to the metal plating layer 13from the bottom side of the electronic device. Then, as shown in FIG.4I, a developing solution is sprayed thereon to remove the photoresist27 at the position where the ultraviolet rays 29 are not irradiated.

Then, as shown in FIG. 4J, the copper foil (=metal layer 3) at theposition where the photoresist 27 is removed is chemically etched toform the protruding terminal 24. Since the PSR film 4 is formed of theinsoluble solder resist or photo-solder resist, it serves as aprotection film in the chemical etching so as not to cause thepenetration of the etchant into the inside of the electronic device.

After the chemical etching, the remaining resist is removed by sprayinga resist removing solution. Finally, as shown in FIG. 4K, the surfacetreatment film 25 is formed on the surface of the protruding terminal 24by electroless tin plating By conducting the above process, theelectronic device 20 is completed that is structured as the corelesspackage with no core substrate and has the external mounting electrodesprotruding from the bottom of the electronic device.

The electronic device 20 thus fabricated is mounted on an externalconnection mounting substrate through solders, and the bonding strength(shear strength) between the electronic device 20 and the mountingsubstrate is measured. As a result, by virtue of the reinforcing effectthat the PSR film 4 as an insulation layer is securely bonded to thesealing resin 23 and of the increase of contact area between theexternal connection mounting terminal 24 and the solder, it is confirmedthat the bonding structure of the coreless package (with electrodedimensions of 0.25 mm×0.18 mm×0.018 mm) of this embodiment has two timesor more strength than that of the conventional coreless package (withelectrode dimensions of 0.15 mm×0.15 mm and no thickness) tentativelymanufactured.

Effects of the Second Embodiment

The following effects can be obtained by the second embodiment of theinvention.

(1) In the base material 11, the adhesion force between the metal layer3 and the metal film 2 with the release layer is smaller than thatbetween the metal layer 3 and the PSR film 4. Thus, the tape member 1with the metal layer 2 can be surely removed from the electronic device10 by utilizing the release layer. No crack is caused by that releasestress and the metal layer 3 can be easy and securely left on the sideof the electronic device substrate 10′. Therefore, the remainder such asadhesive to the metal layer 3 on the side of electronic device substrate10′ or the film breaking caused in case of using the film substrate canbe eliminated.

(2) The electronic device 20 can be constructed that is formed with acoreless type suited to a low-profile device and has the protrudingterminal 24 suited to external mounting on the back side of theelectronic device.

(3) The external mounting protruding terminal 24 is processed bychemical etching as a technology of photo fabrication from the metallayer 3 with an even thickness. Thus, it can be uniform in thickness andwidth and have high position accuracy.

(4) The external mounting protruding terminal 24 is processed from athin metal material with a thickness of about 18 μm. Thus, the materialis suited to microscopic processing as compared to solder balls for theBGA, and it does not limit the downsizing of electronic device in volumeand thickness. Further, the protruding shape allows the connection tothe external mounting solder both at the side and at the top of theprotruding terminal. In contrast, the conventional coreless package (SeeFIG. 11) allows the connection to the external mounting solder only atthe top of the external mounting metal electrode 105 a. Thus, in thisembodiment, the contact area to the external mounting solder can beincreased as compared to the conventional coreless package and the sameconnection strength as BGA can be obtained.

(5) The PSR film 4 located at the side of the metal plating layer 13 canallow an increase in connection strength of the sealing resin 23covering the metal plating layer 13 and the electronic parts 21, andserves as a reinforcing member to enhance the mechanical durabilityduring the manufacturing process of the electronic device. Thus, theelectronic device can be produced with high mechanical strength as wellas being rendered low-profile.

(6) The tape member 1 with heat resistance is bonded to the compositemetal layer 12. Therefore, durability to the thermal and mechanicalstress can be increased during the substrate processing and the deviceassembling.

(7) The composite metal layer 12 and the tape member 1 are balanced inthickness. Therefore, the polyimide tape 8 can be removed easily andsmoothly.

(8) Due to having the support substrate, the electronic device substratecan be securely processed even when the metal layer 3 is formed of therolled copper foil with a thickness of less than 20 μm. Therefore, theprotruding terminal 24 can be less than 20 μm in height at the bottomside of the electronic device.

Although in the second embodiment the metal layer 3 is formed of the 18μm thick rolled copper foil, it may be formed of an electrolytic copperfoil or another metal foil. Further, by using a further thin metal foil,load in the removal process in chemical or mechanical polishing can bereduced.

Third Embodiment

Composition of Electronic Device

FIG. 5 is a cross sectional view showing an electronic device substratein the third preferred embodiment according to the invention.

The electronic device 30 comprises: an electronic device substrate 10′that is formed by removing the base material 11 from the electronicdevice substrate 10 of the first embodiment; an electronic parts 21mounted at a predetermined position on the electronic device substrate10′; bonding wires 22 that connects an external connection terminal (notshown) on the electronic parts 21 to the second plating film 7 of theelectronic device substrate 10′; a sealing resin 23, as insulatingcovering material, formed on the electronic device substrate 10′ tocover the electronic parts 21, the bonding wires 22 and the secondplating film 7; a conductor wiring layer (or conductor circuit) 31formed on the back surface of the PSR film 4 and contacting the firstplating film 6; a surface treatment film 32 formed on the surface of theconductor wiring layer (or conductor circuit) 31; and a secondinsulation layer 33 covering partially the surface treatment film 32.

This embodiment has a feature that the conductor wiring layer (orconductor circuit) 31 is formed at the bottom of the PSR film 4 underthe electronic parts 21 so as to reduce the mounting area of theelectronic device 30.

Method of Making the Electronic Device

A method of making the electronic device of the third embodiment will beexplained below. FIGS. 6A to 6K are cross sectional views showing themethod of making the electronic device in FIG. 5.

First, as shown in FIG. 6B, the electronic parts 21 (which isexemplified by an IC chip in this embodiment) is bonded through a diebonding paste at a predetermined position on of the PSR film 4 of theelectronic device substrate 10 as shown in FIG. 6A (and which is alsoshown in FIG. 1). Then, as shown in FIG. 6C, the aluminum electrodeterminal of the electronic parts 21 is electrically connected throughthe gold bonding wires 22 to the second plating film 7 of the electronicdevice substrate 10.

Then, as shown in FIG. 6D, the sealing resin 23 is formed on theelectronic parts 21, the bonding wires 22 and the second plating film 7so as to protect the electronic parts 21 and the bonding portions fromthe external environment. Then, as shown in FIG. 6E, the tape member 1with the metal layer 2 is separated from the metal layer 3 to expose themetal layer 3 and to have an IC package 26 (See FIG. 6F).

The seven-layer composition as shown in FIG. 6D is, in the order fromthe top layer, the sealing resin 23 or the electronic parts 21 with thedie bonding paste or the bonding wires 22 (gold wires)/the PSR film 4 orthe first and second plating films 6, 7/the rolled copper foil (=metallayer 3) /the release layer (not shown)/the ultra-thin copper foil(=metal film 2)/the adhesive 9 (See FIG. 2B)/the support substrate (=thepolyimide tape 8: See FIG. 2B). Above all, the adhesion force at theinterface of the rolled copper foil (=metal layer 3) and the ultra-thincopper foil (=metal film 2) through the release layer is 20 N/mconsiderably small as compared to the adhesion force, greater than 1000N/m, at the other interfaces. Therefore, the tape member 1 with themetal layer 2 and the release layer can be securely separated from themetal layer 3 to expose the bottom of the metal layer 3 (=rolled copperfoil) as shown in FIG. 6F.

Then, as shown in FIG. 6G, a negative type photoresist 27 is coated onthe surface of the metal layer 3 at the bottom of the IC package 26.Then, as shown in FIG. 6H, ultraviolet rays 29 are irradiated through aphotomask 34 with a predetermined mask pattern corresponding to adesired wiring pattern from the bottom side of the electronic device.Then, as shown in FIG. 6I, a developing solution is sprayed thereon toremove the photoresist 27 at the position where the ultraviolet rays arenot irradiated.

Then, as shown in FIG. 6J, the copper foil (=metal layer 3) at theposition where the photoresist 27 is removed is chemically etched byetchant to form the conductor wiring layer (or conductor circuit) 31.Since the PSR film 4 is formed of the insoluble solder resist orphoto-solder resist, it serves as a protection film in the chemicaletching so as not to cause the penetration of the etchant into theinside of the electronic device.

After the chemical etching, the remaining resist is removed by sprayinga resist removing solution. Finally, as shown in FIG. 6K, the surfacetreatment film 32 is formed on the surface of the conductor wiring layer(or conductor circuit) 31 by electroless tin plating. Optionally, whenthe conductor wiring layer (or conductor circuit) 31 is formed,unnecessary parts in the external mounting are preferably covered withphoto-solder resist as the second insulation layer 33.

By conducting the above process, the electronic device 30 is completedthat is structured as the coreless package with no core substrate andhas the conductor wiring layer (or conductor circuit) 31 protruding fromthe bottom of the electronic device.

The electronic device 30 thus fabricated is mounted on an externalconnection mounting substrate through solders, and the bonding strength(shear strength) between the electronic device 30 and the mountingsubstrate is measured. As a result, by virtue of the reinforcing effectthat the PSR film 4 as an insulation layer is securely bonded to thesealing resin 23 and of the increase of contact area between theexternal connection conductor wiring layer (or conductor circuit) 31 andthe solder, it is confirmed that the bonding structure of the corelesspackage (with electrode dimensions of 0.25 mm×0.18 mm×0.018 mm) of thisembodiment has two times or more strength than that of the conventionalcoreless package (with electrode dimensions of 0.15 mm×0.15 mm and nothickness) tentatively manufactured. Thus, it is confirmed that thisembodiment can have the same effect as the second embodiment.

Due to having the PSR film 4 as insulation layer under the electronicparts 21, the electronic device 30 of this embodiment can allow thedeposition of the conductor wiring layer (or conductor circuit) 31 underthe electronic parts 21 to reduce the mounting area. This is veryadvantageous in the case that the electronic device 30 has many externalconnection terminals (i.e., in case of a multiterminal electronicdevice).

In general, external connection terminals for electronic device areformed to have a width greater than a producible microscopic wiringwidth of an electronic device substrate so as to increase connectionstrength to a solder used to connect the electronic device with amounting substrate. Also, distance (separation distance: D) betweenadjacent external connection terminals is set to be greater than aproducible microscopic wiring distance of an electronic device substrateso as to prevent the solder electrical short circuit (i.e., solderbridge) between the terminals. Thus, in general, the mounting area of amultiterminal electronic device depends on the design of the externalconnection terminal.

FIGS. 7A to 7D illustrate a comparison between the structure of aconventional coreless package and the structure of an electronic devicein the third preferred embodiment of the invention wherein theseparation distance D is set constant.

As shown in FIGS. 7A and 7B, the conventional coreless package 120 has adie pad 104 and, therefore, it is not possible to form the metalelectrode 105 a as an external terminal under the electronic parts 21.Because of this, all of the metal terminals 105 a have to be disposed onthe periphery of an electronic device 106.

In contrast, the multiterminal electronic device 30 (with 22 externalterminals) of this embodiment can allow the reduction of mounting areadown to about 70% of that of the conventional coreless package 120 (with22 external terminals)

Effects of the Third Embodiment

The following effects can be obtained by the third embodiment of theinvention.

(1) In the base material 11, the adhesion force between the metal layer3 and the metal film 2 with the release layer is smaller than thatbetween the metal layer 3 and the PSR film 4. Thus, the tape member 1with the metal layer 2 can be surely removed from the electronic device10 by utilizing the release layer. No crack is caused by that releasestress and the metal layer 3 can be easy and securely left on the sideof the electronic device substrate 10′. Therefore, the remainder such asadhesive to the metal layer 3 on the side of electronic device substrate10′ or the film breaking caused in case of using the film substrate canbe eliminated.

(2) The electronic device 30 can be constructed that is formed with acoreless type suited to a low-profile device and has the conductorwiring layer 31 suited to external mounting on the back side of theelectronic device.

(3) The external mounting conductor wiring layer 31 is processed bychemical etching as a technology of photo fabrication from the metallayer 3 with an even thickness. Thus, it can be uniform in thickness andwidth and have high position accuracy.

(4) The external mounting conductor wiring layer 31 is processed from athin metal material with a thickness of about 18 μm. Thus, the materialis suited to microscopic processing as compared to solder balls for theBGA, and it does not limit the downsizing of electronic device in volumeand thickness. Further, the protruding shape of the conductor wiringlayer 31 allows the connection to the external mounting solder both atthe side and at the top of the external mounting terminal portion of theconductor wiring layer 31. In contrast, the conventional corelesspackage (See FIG. 11) allows the connection to the external mountingsolder only at the top of the external mounting metal electrode 105 a.Thus, in this embodiment, the contact area to the external mountingsolder can be increased as compared to the conventional coreless packageand the same connection strength as BGA can be obtained.

(5) The PSR film 4 located at the side of the metal plating layer 13 canallow an increase in connection strength of the sealing resin 23covering the metal plating layer 13 and the electronic parts 21, andserves as a reinforcing member to enhance the mechanical durabilityduring the manufacturing process of the electronic device. Thus, theelectronic device can be produced with high mechanical strength as wellas being rendered low-profile.

(6) The tape member 1 with heat resistance is bonded to the compositemetal layer 12. Therefore, durability to the thermal and mechanicalstress can be increased during the substrate processing and the deviceassembling.

(7) The composite metal layer 12 and the tape member 1 are balanced inthickness. Therefore, the polyimide tape 8 can be removed easily andsmoothly.

(8) Due to having the support substrate, the electronic device substratecan be securely processed even when the metal layer 3 is formed of therolled copper foil with a thickness of less than 20 μm. Therefore, theconductor wiring layer (or conductor circuit) 31 can be less than 20 μmin height at the bottom side of the electronic device.

(9) Due to having the PSR film 4 under the electronic parts 21, theconductor wiring layer (or conductor circuit) 31 can be formed to reducethe mounting area of the electronic device 30.

Although in the third embodiment the metal layer 3 is formed of the 18μm thick rolled copper foil, it may be formed of an electrolytic copperfoil or another metal foil. Further, by using a further thin metal foil,load in the removal process in chemical or mechanical polishing can bereduced.

Other Embodiments

Although the invention has been described with respect to the specificembodiments for complete and clear disclosure, the appended claims arenot to be thus limited but are to be construed as embodying allmodifications and alternative constructions that may occur to oneskilled in the art which fairly fall within the basic teaching hereinset forth.

For example, although in the above embodiments the support substrate isformed of the laminated polyimide film 8 during the manufacturing of theelectronic device substrate, the polyimide film may be omitted if thehandling during the manufacturing is possible.

The electrical connection between the conductor terminal and theelectronic parts can be made by a flip-chip connection instead of thewire bonding.

Although in the above embodiments the metal plating layer is formed ofthe two-layer plating structure of gold/nickel prepared for the wirebonding, it can be formed of an arbitrary combination of suitablematerials and thicknesses according to the electrical connection methodof the electronic parts to the substrate or to the mounting method ofthe fabricated package to a printed-circuit board.

Although in the above embodiments the surface treatment layer (orfunctional plating) of tin plating is formed on the surface of theprotruding terminal or the conductor wiring layer formed at the bottomof the electronic device, it may be formed of gold plating for themounting by soldering, NCP, ACF etc.

Although in the above embodiments the number of the electronic parts 21mounted on the one electronic device is one, plural electronic parts canbe mounted thereon to compose a multi-chip package. Further, thisinvention can be applied to the case that plural electronic parts arearrayed and mounted in a unit area, it is resin-sealed integrally and itis cut into small pieces corresponding to a unit parts by dicing.

1. An electronic device substrate, comprising: a base material formed ofa thin board; an electrical insulation layer formed on the base materialand comprising a plurality of openings in a thickness direction thereof;and a metal plating layer filled in the plurality of openings, whereinthe base material comprises a metal layer, a release layer formedcontacting the metal layer, and a metal film formed contacting therelease layer.
 2. The electronic device substrate according to claim 1,wherein: the base material comprises, formed in order from theelectrical insulation layer, the metal layer, the release layer, themetal layer, a tape member, and an adhesion force between the metallayer and the release layer with the metal film is smaller than thatbetween the metal layer and the electrical insulation layer.
 3. Theelectronic device substrate according to claim 1, wherein: theelectrical insulation layer comprises a solder resist, a photo-solderresist or a polyimide film.
 4. The electronic device substrate accordingto claim 1, wherein: the metal plating layer comprises anyone of gold,silver, copper, nickel, palladium, tin, rhodium and cobalt or an alloythereof or laminated layers each formed of any one thereof or an alloythereof.
 5. A method of making an electronic device substrate,comprising the steps-of: forming a base material by laminating acomposite metal layer comprising a metal layer, a release layer and ametal film on a tape member; forming an electrical insulation layer onthe metal layer of the base material; forming an opening in theelectrical insulation layer; and filling the opening with a metalplating layer.
 6. An electronic device, comprising: an electronic partscomprising an external connection electrode; an electrical insulationlayer on a surface of which the electronic parts is mounted andcomprises a plurality of openings in a thickness direction thereof; ametal plating layer filled in the plurality of openings of theelectrical insulation layer and electrically connected to the electrodeof the electronic parts; an insulating covering material that covers aconnection surface of the metal plating layer to the electronic partsand the electronic parts; and a conductive structure formed contactingthe metal plating layer on an other surface of the electrical insulationlayer.
 7. The electronic device according to claim 6, wherein: theconductive structure comprises a surface treatment layer formed thereon.8. The electronic device according to claim 6, wherein: the conductivestructure comprises an external connection protruding terminal.
 9. Theelectronic device according to claim 6, wherein: the conductivestructure comprises a conductor wiring layer.
 10. A method of making anelectronic device, comprising the steps of: providing an electronicdevice substrate comprising: a base material formed of a thin board, thebase material comprising a tape member and, sequentially formed on thetape member, a metal film; a release layer and a metal layer, anelectrical insulation layer formed on the base material and a pluralityof openings in a thickness direction thereof; and a metal plating layerfilled in the plurality of openings; mounting an electronic parts on theelectronic device substrate, electrically connecting an electrode of theelectronic parts to the metal plating layer, and subsequently coveringat least the electrical connection between the electronic parts and themetal plating layer with an insulating covering material; removing thetape member and the metal film from the electronic device substrate byusing the release layer to leave the metal layer with the electronicdevice substrate; and forming a conductive structure at a positioncorresponding to the metal plating layer by processing the metal layerby using a photo fabrication.
 11. The method according to claim 10,wherein: the conductive structure comprises an external connectionprotruding terminal.
 12. The method according to claim 11, furthercomprising the step of: forming a surface treatment layer on a surfaceof the conductive structure by using a plating method.
 13. Theelectronic device according to claim 10, wherein: the conductivestructure comprises a conductor wiring layer to compose a conductorcircuit.
 14. The method according to claim 13, further comprising thesteps of: forming a surface treatment layer on a surface of theconductive structure by using a plating method; and forming a secondelectrical insulation layer on a part of the surface treatment layer.15. The electronic device according to claim 6, further comprising: aconductor wiring layer formed on the other surface of the electricalinsulation layer and under the electronic parts.
 16. The methodaccording to claim 10, further comprising the step of: forming aconductor wiring layer on a bottom surface of the electrical insulationlayer and under the electronic parts.
 17. A coreless package,comprising: an insulating base material comprising an opening in athickness direction thereof; an electronic parts mounted on theinsulating material; a metal plating layer formed in the opening andelectrically connected to the electronic parts; an insulating coveringmaterial that covers the metal plating layer and the electronic parts,wherein the insulating base material is formed of a different materialthan the insulating covering material.
 18. The coreless packageaccording to claim 17, further comprising: a conductive structure formedcontacting the metal plating layer on a bottom surface of the insulatingbase material.
 19. The coreless package according to claim 17, furthercomprising: a conductor wiring layer formed on a bottom surface of theinsulating base material and under the electronic parts.